Flash Memory. AT49BV322D Datasheet

AT49BV322D Datasheet PDF, Equivalent


Part Number

AT49BV322D

Description

Flash Memory

Manufacture

ATMEL Corporation

Total Page 30 Pages
PDF Download
Download AT49BV322D Datasheet PDF


AT49BV322D Datasheet
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Features
Single Voltage Read/Write Operation: 2.65V to 3.6V
Access Time – 70 ns
Sector Erase Architecture
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 10 µs
Fast Sector Erase Time – 100 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
– 10 mA Active
– 15 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection and Accelerated Program Operation
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
32-megabit
(2M x 16/4M x 8)
3-volt Only
Flash Memory
AT49BV322D
AT49BV322DT
1. Description
The AT49BV322D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152
words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on
I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec-
tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball
CBGA package. The device has CE and OE control signals to avoid any bus conten-
tion. This device can be read or reprogrammed using a single power supply, making it
ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see “Sector Lockdown” on page 7).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
3582B–FLASH–11/05

AT49BV322D Datasheet
The VPP pin provides data protection. When the VPP input is below 0.4V, the program and erase
functions are inhibited. When VPP is at 1.65V or above, normal program and erase operations
can be performed. With VPP at 10.0V, the program (Dual-word Program command) operation is
accelerated.
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement
of entering the three-byte program sequence is offered to further improve programming time.
After entering the six-byte code, only single pulses on the write control lines are required for writ-
ing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering down
the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to
VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not work
while in this mode; if entered they will result in data being programmed into the device. It is not
recommended that the six-byte code reside in the software of the final product but only exist in
external programming code.
The BYTE pin controls whether the device data I/O pins operate in the byte or word configura-
tion. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0 - I/O15 are active
and controlled by CE and OE.
If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins I/O0
- I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tri-stated, and
the I/O15 pin is used as an input for the LSB (A-1) address function.
2 AT49BV322D(T)
3582B–FLASH–11/05


Features Datasheet pdf www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sec tor Erase Architecture – Sixty-three 32K Word (64K Bytes) Sectors with Indiv idual Write Lockout – Eight 4K Word ( 8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 10 µs Fast Sector Erase Time – 100 ms S uspend/Resume Feature for Erase and Pro gram – Supports Reading and Programmi ng from Any Sector by Suspending Erase of a Different Sector – Supports Read ing Any Byte/Word in the Non-suspending Sectors by Suspending Programming of A ny Other Byte/Word Low-power Operation – 10 mA Active – 15 µA Standby Dat a Polling, Toggle Bit, Ready/Busy for E nd of Program Detection VPP Pin for Wri te Protection and Accelerated Program O peration RESET Input for Device Initial ization Sector Lockdown Support TSOP an d CBGA Package Options Top or Bottom Bo ot Block Configuration Available 128-bi t Protection Register Minimum 100,000 Erase Cycles Common Flash Interface (CFI) • • • •.
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