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12A02SP Datasheet, Equivalent, Amplifier Applications.

Low-Frequency General-Purpose Amplifier Applications

Low-Frequency General-Purpose Amplifier Applications

 

 

 

Part 12A02SP
Description Low-Frequency General-Purpose Amplifier Applications
Feature www.
DataSheet4U.
com Ordering number : E NN7485 12A02SP PNP Epitaxial Planar Si licon Transistors 12A02SP Low-Frequenc y General-Purpose Amplifier Application s Applications
• Package Dimensions unit : mm 2033A [12A02SP] 4.
0 2.
2 Low- frequency Amplifier, high-speed switchi ng, small motor drive, muting circuit.
Features


• Large current c apacitance.
Low collector-to-emitter sa turation voltage (resistance).
RCE (sat ) typ.
=285mΩ [IC=1A, IB=50mA].
Small ON-resistance (Ron).
0.
4 0.
5 0.
6 0.
4 1.
8 15.
0 3.
0 0.
4 1 2 1.
3 0.
7 3 1.
3 Specifications Absolute Maximum Ratin gs at Ta=25°C Parameter .
Manufacture Sanyo Semicon Device
Datasheet
Download 12A02SP Datasheet
Part 12A02SP
Description Low-Frequency General-Purpose Amplifier Applications
Feature www.
DataSheet4U.
com Ordering number : E NN7485 12A02SP PNP Epitaxial Planar Si licon Transistors 12A02SP Low-Frequenc y General-Purpose Amplifier Application s Applications
• Package Dimensions unit : mm 2033A [12A02SP] 4.
0 2.
2 Low- frequency Amplifier, high-speed switchi ng, small motor drive, muting circuit.
Features


• Large current c apacitance.
Low collector-to-emitter sa turation voltage (resistance).
RCE (sat ) typ.
=285mΩ [IC=1A, IB=50mA].
Small ON-resistance (Ron).
0.
4 0.
5 0.
6 0.
4 1.
8 15.
0 3.
0 0.
4 1 2 1.
3 0.
7 3 1.
3 Specifications Absolute Maximum Ratin gs at Ta=25°C Parameter .
Manufacture Sanyo Semicon Device
Datasheet
Download 12A02SP Datasheet

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12A02SP

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