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HE8812SG

Hitachi Semiconductor

GaAlAs Infrared Emitting Diode


Description
www.DataSheet4U.com HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features High efficiency and high output power Package Ty...



Hitachi Semiconductor

HE8812SG

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