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PJD882S

ETC
Part Number PJD882S
Manufacturer ETC
Description NPN Epitaxial Silicon Transistor
Published Jan 5, 2007
Detailed Description www.DataSheet4U.com PJD882/PJD882S NPN Epitaxial Silicon Transistor AUDIO FREQ UENCY POWER AMPLIFIER LOW SPEED SWITCHIN...
Datasheet PDF File PJD882S PDF File

PJD882S
PJD882S

Overview
www.
DataSheet4U.
com PJD882/PJD882S NPN Epitaxial Silicon Transistor AUDIO FREQ UENCY POWER AMPLIFIER LOW SPEED SWITCHING • • • Complement to PJB772 PW 10ms,Duty Cycle50%Pulse Test PW 350µ s, Duty Cycle 2% TO-92 TO-126 ABSOLUTE MAXIMUM RATINGS (T a = 25 ℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Bias Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25℃) Collector Dissipation (Ta=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC IB PC PC Tj Tstg Rating 40 30 5 3 7 0.
6 10 1 150 -55~150 Unit V V V A A A W W ℃ ℃ Pin : 1.
Emitter 2.
Collector 3.
Base ORDERING INFORMATION Device PJD882...


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