N-Channel MOSFET. FDP65N06 Datasheet

FDP65N06 Datasheet PDF, Equivalent


Part Number

FDP65N06

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
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FDP65N06 Datasheet
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FDP65N06
60V N-Channel MOSFET
Features
• 65A, 60V, RDS(on) = 0.016@VGS = 10 V
• Low gate charge ( typical 132nC)
• Low Crss ( typical 35pF)
• Fast switching
• Improved dv/dt capability
June 2006
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
FDP Series
G
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
S
FDP65N06
60
65
41
260
± 20
430
65
13.5
4.5
135
1.08
-55 to +150
300
FDP65N06
0.92
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FDP65N06 Rev. A1
1
www.fairchildsemi.com

FDP65N06 Datasheet
Package Marking and Ordering Information
Device Marking
FDP65N06
Device
FDP65N06
Package
TO-220
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 32.5 A
VDS = 40 V, ID = 32.5 A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 30 V, ID = 65A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 48 V, ID = 65A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 65 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 65 A,
dIF / dt = 100 A/µs
(Note 4)
60
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 47µH, IAS =65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 65A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.5
--
--
--
--
--
0.013
39
1670
464
35
24
94
98
52
33
10
11
--
--
--
62
132
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
0.016
--
V
S
2170
600
52
pF
pF
pF
58 ns
200 ns
210 ns
114 ns
43 nC
-- nC
-- nC
65 A
260 A
1.4 V
-- ns
-- nC
FDP65N06 Rev. A1
2 www.fairchildsemi.com


Features Datasheet pdf www.DataSheet4U.com FDP65N06 60V N-Chan nel MOSFET June 2006 UniFET FDP65N06 60V N-Channel MOSFET Features • • • • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 132nC) Low Crss ( typical 35pF) Fast sw itching Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors ar e produced using Fairchild’s propriet ary, planar stripe, DMOS technology. Th is advanced technology has been especia lly tailored to minimize on-state resis tance, provide superior switching perfo rmance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies , active power factor correction, elect ronic lamp ballast based on half bridge topology. D G G DS TO-220 FDP Serie s S Absolute Maximum Ratings Symbol V DSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ , TSTG TL Drain-Source Voltage Drain Cu rrent - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Puls.
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