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2SC5658M3T5G
NPN Silicon General
Purpose Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
• Reduces Board Space
• High hFE, 210 −460 (typical)
• Low VCE(sat), < 0.5 V
• ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
50
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
5.0
Vdc
Collector Current − Continuous
IC
100 mAdc
THERMAL CHARACTERISTICS
Rating
Symbol Max Unit
Power Dissipation (Note 1)
PD 260 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
−55 ~ + 150
°C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
2
1
XX M
XX = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
2SC5658M3T5G SOT−723 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
February, 2004 − Rev. 0
1
Publication Order Number:
2SC5658M3/D
