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Amplifier Transistor. 2SC5658M3T5G Datasheet |
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2SC5658M3T5G,
2SC5658RM3T5G
NPN Silicon General
Purpose Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
• Reduces Board Space
• High hFE, 210 −460 (typical)
• Low VCE(sat), < 0.5 V
• ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
• Available in 8 mm, 7−inch/3000 Unit Tape and Reel
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
50
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current − Continuous
IC
150 mAdc
THERMAL CHARACTERISTICS
Rating
Symbol Max Unit
Power Dissipation (Note 1)
PD 260 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
−55 ~ + 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
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NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
2
1
XXM
XX = Specific Device Code
(B9 = 2SC5658M3T5G
RM = 2SC5658RM3T5G)
M = Date Code
ORDERING INFORMATION
Device
Package Shipping†
2SC5658M3T5G
SOT−723 8000 / Tape &
(Pb−Free)
Reel
2SC5658RM3T5G
SOT−723 8000 / Tape &
(Pb−Free)
Reel
NSV2SC5658M3T5G SOT−723 8000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 5
1
Publication Order Number:
2SC5658M3/D
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2SC5658M3T5G, 2SC5658RM3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
V(BR)CBO
50
−
− Vdc
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
− Vdc
Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)
V(BR)EBO
7.0
−
− Vdc
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO − − 0.5 mA
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
IEBO − − 0.5 mA
Collector-Emitter Saturation Voltage (Note 2)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
−
Vdc
− 0.4
DC Current Gain (Note 2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
2SC5658M3T5G
2SC5658RM3T5G
hFE
−
120 − 560
215 − 375
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
− 180 − MHz
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz)
COB
− 2.0 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*Include NSV−prefix devices where applicable.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2SC5658M3T5G, 2SC5658RM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
60
TA = 25°C
50
160 mA
140 mA
1
IC/IB = 10
40 120 mA
100 mA
30
80 mA
0.1 TA = 25°C
20
60 mA
TA = 150°C
40 mA
10
IB = 20 mA
TA = −55°C
0
02 4 6
VCE, COLLECTOR VOLTAGE (V)
Figure 1. IC − VCE
0.01
8 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 IC/IB = 10
1
0.9 TA = −55°C
0.8
1000
TA = 150°C
TA = 25°C
TA = −55°C
VCE = 6 V
0.7 TA = 25°C
0.6
100
0.5
0.4 TA = 150°C
0.3
0.2 10
0.1
1
10
100
1000
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
30 mA
2.0
1.8
50 mA
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Figure 4. DC Current Gain vs. Collector
Current
1
VCE = 2 V
0.9
1.6 0.8 TA = −55°C
1.4
1.2
1.0
30 mA
0.7
0.6 TA = 25°C
0.8 0.5
0.6
0.4 10 mA
0.2
0
0.01
0.1
IC = 100 mA
1 10
0.4
0.3
0.2
100 0.1
TA = 150°C
1
10
100 1000
IB, BASE CURRENT (mA)
Figure 5. Saturation Region
IC, COLLECTOR CURRENT (mA)
Figure 6. Base−Emitter Turn−ON Voltage vs.
Collector Current
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