DIM200MHS17-A000 Bridge Datasheet

DIM200MHS17-A000 Datasheet, PDF, Equivalent


Part Number

DIM200MHS17-A000

Description

Igbt Modules - Half Bridge

Manufacture

Dynex Semiconductor

Total Page 10 Pages
Datasheet
Download DIM200MHS17-A000 Datasheet


DIM200MHS17-A000
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DIM200MHS17-A000
DIM200MHS17-A000
Half Bridge IGBT Module
Replaces issue March 2002, version DS5459-4.0
DS5459-5.1 June 2002
FEATURES
s 10µs Short Circuit Withstand
s Non Punch Through Silicon
s Isolated Copper Base Plate
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s Inverters
s Motor Controllers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As:
DIM200MHS17-A000
Note: When ordering, please use the whole part number.
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10

DIM200MHS17-A000
www.DataSheet4U.com
DIM200MHS17-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
VCES
VGES
IC
I
C(PK)
Pmax
I2t
Visol
Q
PD
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 65˚C
Peak collector current
1ms, Tcase = 110˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Diode I2t value
V = 0, t = 10ms, T = 125˚C
Rp
vj
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1800V, V2 = 1300V, 50Hz RMS
Max. Units
1700 V
±20 V
200 A
400 A
1435 W
7.5 kA2s
4000 V
10 pC
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Features www.DataSheet4U.com DIM200MHS17-A000 D IM200MHS17-A000 Half Bridge IGBT Module Replaces issue March 2002, version DS5 459-4.0 DS5459-5.1 June 2002 FEATURES s s s 10µs Short Circuit Withstand No n Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 200A 400A *(measured at the powe r busbars and not the auxiliary termina ls) APPLICATIONS s s Inverters Motor Controllers 11(C2) 6(G2) 7(E2) 3(C1) T he Powerline range of high power module s includes half bridge, chopper, dual, single and bi-directional switch config urations covering voltages from 600V to 3300V and currents up to 2400A. The DI M200MHS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated g ate bipolar transistor (IGBT) module. T he IGBT has a wide reverse bias safe op erating area (RBSOA) plus full 10µs sh ort circuit withstand. The module incor porates an electrically isolated base p late and low inductance construction enabling circuit designers t.
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