Half Bridge IGBT Module
Replaces issue December 2003, version FDS5673-2.3
FDS5673-3.0 January 2004
I 10µs Short Circuit Withstand
I Non Punch Through Silicon
I Isolated Copper Base Plate
I Motor Controllers
I Induction Heating
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM200WHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Half bridge circuit diagram
Note: When ordering, please use the whole part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.