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Transimpedance Amplifier. ADN2880 Datasheet |
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FEATURES
Bandwidth: 2.5 GHz
Optical sensitivity: −24.2 dBm1
Differential transimpedance: 4400 V/A
Power dissipation: 70 mW
Differential output swing: 260 mV p-p
Input overload current: 4.3 mA p-p
On-chip RSSI function
Low frequency cutoff: 20 kHz
On-chip PD filter: RF = 200 Ω, CF = 20 pF
Die size: 0.7 mm × 1.2 mm
APPLICATIONS
3.2 Gbps or below optical receivers
SONET/GbE/FC optical receivers
SFF-8472-compliant receivers
PIN/APD-TIA receive optical subassemblies (ROSA)
3.2 Gbps, 3.3 V, Low Noise,
Transimpedance Amplifier
ADN2880
GENERAL DESCRIPTION
The ADN2880 is a 3.3 V, high gain SiGe transimpedance
amplifier (TIA). The TIA converts the small signal current of a
photo detector into differential voltage output. The ADN2880
features a 315 nA typical input-referred noise, enabling an
optical sensitivity of −24.2 dBm (0.85 A/W PIN). With a
bandwidth of 2.5 GHz, the ADN2880 allows a data rate
operation up to 3.2 Gbps. Typical power dissipation is
approximately 70 mW.
To facilitate the assembly in small form factor packages, such
as TO-46 headers, the ADN2880 provides an on-chip RC filter
(200 Ω, 20 pF) and features a 20 kHz low frequency cutoff
without using an external capacitor. An on-chip RSSI circuit,
which generates a voltage proportional to the average photo-
diode current, is also available for power monitoring and
assembly alignment.
The ADN2880 is available in die form. With a chip area of
1.2 mm × 0.7 mm, the TIA layout is specifically optimized for
TO-Can-based packages.
1 Based on 1550 nm PIN, responsivity = 0.85 A/W, ER = 9 dB, BER < 10−10.
FUNCTIONAL BLOCK DIAGRAM
3.3V
VCCFILTER
VCC
FILTER
IN
200Ω
50Ω
1400Ω
50Ω
OUT
OUTB
20pF
0.85V
GND
5mA
RSSI
GND CAP
Figure 1.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2005 Analog Devices, Inc. All rights reserved.
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ADN2880
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Electrical Specifications ................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
REVISION HISTORY
7/05—Revision 0: Initial Version
Pad Layout and Function Descriptions ..........................................5
Typical Performance Characteristics ..............................................6
Assembly Recommendations...........................................................9
Outline Dimensions ....................................................................... 12
Die Information.......................................................................... 12
Ordering Guide .......................................................................... 12
Rev. 0 | Page 2 of 12
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ADN2880
ELECTRICAL SPECIFICATIONS
Minimum/maximum VCC = 3.3 V ± 0.3 V, TAMBIENT = −40°C to +95°C; typical VCC = 3.3 V, TAMBIENT = 25°C, unless otherwise noted.
Table 1.
Parameter
DYNAMIC PERFORMANCE
Bandwidth (BW)1
Total Input Referred RMS Noise (IRMS)
Total Input Referred RMS Noise (IRMS)
Small Signal Transimpedance (ZT)1
Low Frequency Cutoff
Output Return Loss
Input Overload Current
Maximum Differential Output Swing
Output Data Transition Time
PSRR
Group Delay Variation
Transimpedance Ripple
Deterministic Jitter
Linear Output Range
Linear Input Current Range
DC PERFORMANCE
Power Dissipation
Input Voltage
Output Common-Mode Voltage
Output Impedance
PD FILTER Resistance
PD FILTER Capacitance
RSSI Gain
RSSI Offset
RSSI Accuracy
Conditions
−3 dB
CD = 0.8 pF, dc to 2.1 GHz
CD = 0.6 pF, dc to 2.1 GHz
100 MHz, differential
100 MHz, single-ended
CAP = open, IIN = 20 μA
CAP = 1 nF, IIN = 20 μA
DC to 3.5 GHz, differential
ER = 10 dB, at 95°C1
IIN, P- P = 2.0 mA
IIN, P-P = 1.0 mA; 20% to 80% rise/fall time
IIN = 0 mA, <10 MHz
1.0 GHz to 3.0 GHz
50 MHz to 1.0 GHz, single-ended
10 μA < IIN, P- P ≤ 100 μA, K28.5 @ 3.2 Gbps
100 μA < IIN, P- P ≤ 2.0 mA, K28.5 @ 3.2 Gbps
10 μA < IIN, P- P ≤ 2.0 mA, PRBS 231 − 1 at OC48 (FEC)
Differential, <1 dB compression
Single-ended, <1 dB compression
IIN, AVE = 0 mA
Compliance voltage
DC (50 Ω) terminated to VCC
Single-ended
RF
CF
IIN, AVE = 5 μA to 1 mA
IIN, AVE = 10 μA
5 μA < IIN, P- P ≤ 20 μA
20 μA < IIN, P- P ≤ 1 mA
Min Typ
Max Unit
1.9
2700
1350
2.11
170
2.5
315
300
4400
2200
20
1.0
−26
4.3
260
60
39
50
0.93
16
25
38
210
53
485
6200
3100
−20
375
GHz
nA
nA
V/A
V/A
kHz
kHz
dB
mA p-p
mV p-p
ps
dB
ps
dB
ps p-p
ps p-p
ps p-p
mV p-p
μA p-p
70
0.85
VCC − 0.12
50
200
20
0.85
8.0
±7
±3
110
mW
V
V
Ω
Ω
pF
V/mA
mV
%
%
1 An equivalent IIN, P-P = 13 μA current signal is applied to the TIA input. No input capacitor is applied.
Rev. 0 | Page 3 of 12
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