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PBSS302NZ

NXP
Part Number PBSS302NZ
Manufacturer NXP
Description 5.8A NPN transistor
Published Jan 19, 2007
Detailed Description PBSS302NZ 20 V, 5.8 A NPN low VCEsat transistor 12 January 2023 Product data sheet 1. General description NPN low VCEs...
Datasheet PDF File PBSS302NZ PDF File

PBSS302NZ
PBSS302NZ

Overview
PBSS302NZ 20 V, 5.
8 A NPN low VCEsat transistor 12 January 2023 Product data sheet 1.
General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PZ 2.
Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency due to less heat generation • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors • AEC-Q101 qualified 3.
Applications • DC-to-DC conversion • MOSFET gate driving • Motor control • Charging circuits • Power switches (e.
g.
motors, fans) 4.
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