IRG4PC50FPBF BIPOLAR TRANSISTOR Datasheet

IRG4PC50FPBF Datasheet, PDF, Equivalent


Part Number

IRG4PC50FPBF

Description

Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR

Manufacture

International Rectifier

Total Page 8 Pages
Datasheet
Download IRG4PC50FPBF Datasheet


IRG4PC50FPBF
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PD - 95398
IRG4PC50FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
• Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
C
G
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
VCES = 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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TO-247AC
Max.
600
70
39
280
280
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
6/16/04

IRG4PC50FPBF
IRG4PC50FPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — —
V VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
18
—
—
—
0.62
1.45
—
—
1.6
V
V/°C
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 39A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
— 1.79 — V IC = 70A
See Fig.2, 5
— 1.53 —
IC = 39A , TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance …
21 30 — S VCE = 100V, IC = 39A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 2000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 190 290
IC = 39A
— 28 42
— 65 97
nC VCC = 400V
VGE = 15V
See Fig. 8
— 31 —
— 25 — ns TJ = 25°C
— 240 350
IC = 39A, VCC = 480V
— 130 190
VGE = 15V, RG = 5.0
— 0.37 —
Energy losses include "tail"
— 2.1 — mJ See Fig. 10, 11, 13, 14
— 2.47 3.0
— 28 —
TJ = 150°C,
— 24 —
— 390 —
ns IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0
— 230 —
Energy losses include "tail"
— 5.0 — mJ See Fig. 13, 14
— 13 — nH Measured 5mm from package
— 4100 —
VGE = 0V
— 250 —
— 49 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
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Features www.DataSheet4U.com PD - 95398 IRG4PC5 0FPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium opera ting frequencies ( 1-5 kHz in hard swit ching, >20 kHz in resonant mode). • Ge neration 4 IGBT design provides tighter parameter distribution and higher effi ciency than Generation 3 • Industry st andard TO-247AC package • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE( on) typ. = 1.45V @VGE = 15V, IC = 39A n-channel Benefits • Generation 4 IGB T's offer highest efficiency available • IGBT's optimized for specified appli cation conditions • Designed to be a " drop-in" replacement for equivalent ind ustry-standard Generation 3 IR IGBT's Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM I LM VGE EARV PD @ TC = 25°C PD @ TC = 1 00°C TJ TSTG Collector-to-Emitter Brea kdown Voltage Continuous Collector Curr ent Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ .
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