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IRLI610A
Advanced Power MOSFET
Description
www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 1.185Ω (Typ.) IRLW/I610A BVDSS = 200 V RDS(on) = 1.5Ω ID = 3.3 A D2-...
Fairchild Semiconductor
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IRLI610A
Advanced Power MOSFET
- Fairchild Semiconductor
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