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PD- 91873
IRFC240
HEXFET® Power MOSFET Die in Wafer Form
D
G S
200 V Size 4.0 Rds(on)=0.18Ω 5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current G...
