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Part Number IXTT1N100
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description High-Voltage MOSFET
Datasheet IXTT1N100 DatasheetIXTT1N100 Datasheet (PDF)

  IXTT1N100   IXTT1N100
Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol Test Conditions V DSS VDGR VGS VGSM ID25 I DM T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM IAR EAR EAS dv/dt PD T J TJM T stg Md Weight TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C Mounting torque (TO-247) TO-268 TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 1.5 A 6 A 1.5 A 6 mJ 200 mJ 3 V/ns 60 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. 4 g 6 g 300 °C Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA 1000 2.5 VG.



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