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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Preliminary Data Sheet
IXTH 88N30P IXTT 88N30P
RDS(on)
VDSS = 300 ID25 = 88 = 40 mΩ
V A
Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings 300 300 ± 20 V V V A A A A mJ J V/ns W °C °C °C °C
TO-247 (IXTH)
D (TAB)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
88 75 220 60 60 2.0 10 600 -55 ... +150 150 -55 ... +150
TO-268 (IXTT)
G
S
D (TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features
z z
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 TO-268
300
1.13/10 Nm/lb.in. 6 10 5 g g g
z
International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages Symbol Test .