BRF504 TRANSISTOR Datasheet

BRF504 Datasheet, PDF, Equivalent


Part Number

BRF504

Description

NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

Manufacture

Bipolarics

Total Page 1 Pages
Datasheet
Download BRF504 Datasheet


BRF504
www.DataSheet4U.com
BIPOLARICS, INC.
Part Number BRF504
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
High Gain Bandwidth Product
ft = 10 GHz typ @ IC = 4mA
Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
High Gain
|S21|2 = 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
Dice, Plastic, Hermetic and Surface
Mount packages available
PERFORMANCE DATA:
Electrical Characteristics (TA = 25oC)
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF504 is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
BRF504 an excellent choice for battery application. From 4
mA to over 8mA, ft is nominally 10 GHz. Maximum
recommended continuous current is 16 mA. A broad range
of packages are offered including SOT-23, SOT-143, plastic
and ceramic 0.085" Micro-X, 0.070" Stripline and unencap-
sulated dice.
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
VCBO
VCEO
VEBO
IC CONT
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
RATING
10
10
1.5
8
200
-65 to 150
UNITS
V
V
V
mA
oC
oC
SYMBOL
ft
|S 21 | 2
P1d B
G1d B
NF
hFE
ICBO
IEBO
CCB
PARAMETERS & CONDITIONS
VCE =8V, IC = 4 mA unless stated
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz, IC = 4 mA
IC = 8 mA
f = 2.0 GHz, IC = 4mA
IC = 8 mA
Power output at 1dB compression:
f = 1.0 GHz
Gain at 1dB compression:
f = 1.0 GHz
Noise Figure: VCE =8V, IC = 0.8mA
f = 1.0 GHz
ZS = 50
Forward Current Transfer Ratio:
VCE = 8V, IC = 4 mA
f = 1MHz
Collector Cutoff Current : VCB =8V
Emitter Cutoff Current : VEB =1V
Collector Base Capacitance: VCB = 8V
f = 1MHz
UNIT
GHz
dBm
dBm
dB
µA
µA
pF
MIN.
TYP. MAX.
10
17.5
18.1
12.8
12.6
10
15
1.6
50 100 250
0.2
1.0
0.07


Features www.DataSheet4U.com BIPOLARICS, INC. P art Number BRF504 NPN LOW NOISE SILICO N MICROWAVE TRANSISTOR PRODUCT DATA SHE ET FEATURES: • High Gain Bandwidth Pr oduct f = 10 GHz typ @ I C = 4mA t DESC RIPTION AND APPLICATIONS: Bipolarics' B RF504 is a high performance silicon bip olar transistor intended for use in low noise application at VHF, UHF and micr owave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF504 an excell ent choice for battery application. Fro m 4 mA to over 8mA, ft is nominally 10 GHz. Maximum recommended continuous cur rent is 16 mA. A broad range of package s are offered including SOT-23, SOT-143 , plastic and ceramic 0.085" Micro-X, 0 .070" Stripline and unencapsulated dice . • Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz • High Gai n |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS • Dice, Pl astic, Hermetic and Surface Mount packages available VCBO VCEO VEBO IC.
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