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MITSUBISHI SEMICONDUCTOR
MGF0951P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
FEATURES
High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm High power gain Glp=13dB(TYP.) @f=2.15GHz High power added effici...