2SC1623 Transistors Datasheet

2SC1623 Datasheet, PDF, Equivalent


Part Number

2SC1623

Description

NPN Silicon Epitaxial Transistors

Manufacture

MCC

Total Page 1 Pages
Datasheet
Download 2SC1623 Datasheet


2SC1623
www.DataSheet4U.com
MCC
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
2SC1623
Features
High DC Current Gain: hFE=200 TYP.(VCE=6.0V, IC=1.0mA)
High voltage: VCEO=50V
NPN Silicon
Epitaxial Transistors
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
50
60
5.0
100
200
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Typ Max Units
ICBO Collector Cutoff Current
(VCB=60Vdc,IE=0)
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
--- --- 0.1 uAdc
--- --- 0.1 uAdc
hF
V CE(sat)
VBE(SAT)
VBE
Cob
fT
DC Current Gain*
(IC=1.0mAdc, VCE=6.0Vdc)
Collector Saturation Voltage*
(IC=100mAdc, IB=10mAdc)
Base Saturation Voltage*
(IC=100mAdc,IB=10mAdc)
Base Emitter Voltage*
(VCE=6.0Vdc, IC=1.0mAdc)
Collector Capacitance
(VCB=6.0Vdc, IE=0, f=1.0MHz)
Gain Bandwidth product
(VCE=6.0Vdc, IE=10mAdc)
90 200
--- 0.15
--- 0.86
0.55 0.62
--- 3.0
--- 250
600 ---
0.3 Vdc
1.0 Vdc
0.65 Vdc
--- pF
--- MHz
hFE CLASSIFICATION
Marking
L4
L5
hFE
90-180
135-270
* Pulse Test PW<350us, duty cycle<2%
L6
200-400
L7
300-600
SOT-23
A
D
CB
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 2
www.mccsemi.com
2003/04/30


Features www.DataSheet4U.com MCC Features •   omponents 20736 Ma rilla Street Chatsworth     !"# $ %    !"#  2SC1623 High DC Current Gain: hFE=2 00 TYP.(V CE=6.0V, IC=1.0mA) High volta ge: VCEO=50V NPN Silicon Epitaxial Tra nsistors Unit V V V mA mW O C O C F Ma ximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter- Base Voltage Collector Current Collecto r power dissipation Junction Temperatur e Storage Temperature Rating 50 60 5.0 100 200 -55 to +150 -55 to +150 SOT-23 A D C B E Electrical Characteristi cs @ 25OC Unless Otherwise Specified Sy mbol Parameter Collector Cutoff Current (VCB=60Vdc,IE =0) Emitter Cutoff Curre nt (VEB =5.0Vdc, IC=0) DC Current Gain* (IC=1.0mAdc, VCE=6.0Vdc) Collector Sat uration Voltage* (IC=100mAdc, IB =10mAd c) Base Saturation Voltage* (IC=100mAdc ,IB =10mAdc) Base Emitter Voltage* (V C E=6.0Vdc, IC=1.0mAdc) Collector Capacitance (V CB=6.0Vdc, IE =0, f=.
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