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TC55NEM208AFTN

Toshiba Semiconductor
Part Number TC55NEM208AFTN
Manufacturer Toshiba Semiconductor
Description TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published Feb 9, 2007
Detailed Description www.DataSheet4U.com TC55NEM208AFPN/AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,28...
Datasheet PDF File TC55NEM208AFTN PDF File

TC55NEM208AFTN
TC55NEM208AFTN

Overview
www.
DataSheet4U.
com TC55NEM208AFPN/AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns.
It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high.
There are two control inputs.
CE is used ...


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