AT45DB081B DataFlash Datasheet

AT45DB081B Datasheet, PDF, Equivalent


Part Number

AT45DB081B

Description

8-megabit 2.5-volt Only or 2.7-volt Only DataFlash

Manufacture

ATMEL Corporation

Total Page 30 Pages
Datasheet
Download AT45DB081B Datasheet


AT45DB081B
www.DataSheet4U.com
Features
Single 2.5V - 3.6V or 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– 4096 Pages (264 Bytes/Page) Main Memory
Supports Page and Block Erase Operations
Two 264-byte SRAM Data Buffers – Allows Receiving of Data
while Reprogramming of Nonvolatile Memory
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Low Power Dissipation
– 4 mA Active Read Current Typical
– 2 µA CMOS Standby Current Typical
20 MHz Max Clock Frequency
Hardware Data Protection Feature
100% Compatible to AT45DB081 and AT45DB081A
5.0V-tolerant Inputs: SI, SCK, CS, RESET and WP Pins
Commercial and Industrial Temperature Ranges
Description
The AT45DB081B is a 2.5-volt or 2.7-volt only, serial interface Flash memory ideally
suited for a wide variety of digital voice-, image-, program code- and data-storage
applications. Its 8,650,752 bits of memory are organized as 4096 pages of 264 bytes
each. In addition to the main memory, the AT45DB081B also contains two SRAM
data buffers of 264 bytes each. The buffers allow receiving of data while a page in the
main memory is being reprogrammed, as well as reading or writing a continuous data
Pin Configurations
Pin Name Function
CS Chip Select
SCK
Serial Clock
SI Serial Input
SO Serial Output
WP
RESET
Hardware Page Write
Protect Pin
Chip Reset
RDY/BUSY Ready/Busy
RDY/BUSY
RESET
WP
NC
NC
VCC
GND
NC
NC
NC
CS
SCK
SI
SO
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TSOP Top View
Type 1
(continued)
28 NC
27 NC
26 NC
25 NC
24 NC
23 NC
22 NC
21 NC
20 NC
19 NC
18 NC
17 NC
16 NC
15 NC
SOIC
GND
NC
NC
CS
SCK
SI
SO
NC
NC
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 NC
26 NC
25 WP
24 RESET
23 RDY/BUSY
22 NC
21 NC
20 NC
19 NC
18 NC
17 NC
16 NC
15 NC
CBGA Top View
through Package
12 3
A
NC NC
B
SCK GND VCC
C
CS RDY/BSY WP
D
SO SI RESET
E
NC NC NC
8-megabit
2.5-volt Only or
2.7-volt Only
DataFlash®
AT45DB081B
Rev. 2225C–12/01
1

AT45DB081B
Block Diagram
Memory Array
stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-
contained three step Read-Modify-Write operation. Unlike conventional Flash memories
that are accessed randomly with multiple address lines and a parallel interface, the
DataFlash uses a SPI serial interface to sequentially access its data. DataFlash sup-
ports SPI mode 0 and mode 3. The simple serial interface facilitates hardware layout,
increases system reliability, minimizes switching noise, and reduces package size and
active pin count. The device is optimized for use in many commercial and industrial
applications where high density, low pin count, low voltage, and low power are essential.
The device operates at clock frequencies up to 20 MHz with a typical active read current
consumption of 4 mA.
To allow for simple in-system reprogrammability, the AT45DB081B does not require
high input voltages for programming. The device operates from a single power supply,
2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The
AT45DB081B is enabled through the chip select pin (CS) and accessed via a three-wire
interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock
(SCK).
All programming cycles are self-timed, and no separate erase cycle is required before
programming.
When the device is shipped from Atmel, the most significant page of the memory array
may not be erased. In other words, the contents of the last page may not be filled with
FFH.
WP FLASH MEMORY ARRAY
PAGE (264 BYTES)
SCK
CS
RESET
VCC
GND
RDY/BUSY
BUFFER 1 (264 BYTES)
BUFFER 2 (264 BYTES)
I/O INTERFACE
SI SO
To provide optimal flexibility, the memory array of the AT45DB081B is divided into three
levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture
Diagram illustrates the breakdown of each level and details the number of pages per
sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page
level.
2 AT45DB081B
2225C12/01


Features www.DataSheet4U.com Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface (SPI) Compa tible • Page Program Operation • • • • • • • • – Singl e Cycle Reprogram (Erase and Program) 4096 Pages (264 Bytes/Page) Main Mem ory Supports Page and Block Erase Opera tions Two 264-byte SRAM Data Buffers Allows Receiving of Data while Reprog ramming of Nonvolatile Memory Continuou s Read Capability through Entire Array – Ideal for Code Shadowing Applicatio ns Low Power Dissipation – 4 mA Activ e Read Current Typical – 2 µA CMOS S tandby Current Typical 20 MHz Max Clock Frequency Hardware Data Protection Fea ture 100% Compatible to AT45DB081 and A T45DB081A 5.0V-tolerant Inputs: SI, SCK , CS, RESET and WP Pins Commercial and Industrial Temperature Ranges 8-megabi t 2.5-volt Only or 2.7-volt Only DataFl ash® AT45DB081B Description The AT45D B081B is a 2.5-volt or 2.7-volt only, s erial interface Flash memory ideally suited for a wide variety of digital voice-, image-, program cod.
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