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2SK2595
Silicon N-Channel MOS FET UHF Power Amplifier
1st. Edition Features
High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) Compact package capable of surface mounting
Outline
This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested.
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