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N-Channel MOSFET. 2SK2595 Datasheet |
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2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High efficiency
PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Outline
1st. Edition
This Device is sensitive to Elector Static Discharge.
An Adequate handling procedure is requested.
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2SK2595
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
VDSS
VGSS
ID
I *1
D(pulse)
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Ratings
17
±10
1.1
5
20
150
–45 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Zero gate voltage drain
current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Symbol
I DSS
I GSS
VGS(off)
Ciss
Min.
—
—
0.6
—
Output capacitance
Coss
—
Output Power
Pout
37.3
Drain Rational
ηD 50
Typ Max.
— 10
— ±5.0
— 1.3
68 —
27 —
38.45 —
60 —
Unit
µA
µA
V
pF
pF
dBm
%
Test Conditions
VDS = 12 V, VGS = 0
VGS = ±10V, VDS = 0
ID = 6mA, VDS = 12V
VGS = 5V, VDS = 0
f = 1MHz
VDS = 12V, VGS = 0
f = 1MHz
VDS = 12V,
f = 836.5MHz
Pin = 29.5dBm
VDS = 12V
Pout = 37.3dBm
f = 836.5MHz
Pin = 29.5dBm
2
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Main Characteristics
2SK2595
3
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