2SK2595 FET Datasheet

2SK2595 Datasheet, PDF, Equivalent


Part Number

2SK2595

Description

Silicon N-Channel MOS FET

Manufacture

Hitachi Semiconductor

Total Page 7 Pages
Datasheet
Download 2SK2595 Datasheet


2SK2595
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2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
High power output, High gain, High efficiency
PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz)
Compact package capable of surface mounting
Outline
1st. Edition
This Device is sensitive to Elector Static Discharge.
An Adequate handling procedure is requested.

2SK2595
2SK2595
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
VDSS
VGSS
ID
I *1
D(pulse)
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
Ratings
17
±10
1.1
5
20
150
–45 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Zero gate voltage drain
current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Symbol
I DSS
I GSS
VGS(off)
Ciss
Min.
0.6
Output capacitance
Coss
Output Power
Pout
37.3
Drain Rational
ηD 50
Typ Max.
— 10
— ±5.0
— 1.3
68 —
27 —
38.45 —
60 —
Unit
µA
µA
V
pF
pF
dBm
%
Test Conditions
VDS = 12 V, VGS = 0
VGS = ±10V, VDS = 0
ID = 6mA, VDS = 12V
VGS = 5V, VDS = 0
f = 1MHz
VDS = 12V, VGS = 0
f = 1MHz
VDS = 12V,
f = 836.5MHz
Pin = 29.5dBm
VDS = 12V
Pout = 37.3dBm
f = 836.5MHz
Pin = 29.5dBm
2


Features www.DataSheet4U.com 2SK2595 Silicon N-C hannel MOS FET UHF Power Amplifier 1st . Edition Features • High power outpu t, High gain, High efficiency PG = 7.8d B, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) • Compact package capable o f surface mounting Outline This Devic e is sensitive to Elector Static Discha rge. An Adequate handling procedure is requested. 2SK2595 Absolute Maximum Ra tings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain c urrent Drain peak current Channel dissi pation Channel temperature Storage temp erature Notes: 1. PW ≤ 10 µs, duty c ycle ≤ 1 % 2. Value at Tc = 25°C Sym bol VDSS VGSS ID I D(pulse)* Pch* Tch T stg 2 1 Ratings 17 ±10 1.1 5 20 150 45 to +150 Unit V V A A W °C °C E lectrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Ga te to source leak current Gate to sourc e cutoff voltage Input capacitance Outp ut capacitance Output Power Symbol I DS S I GSS VGS(off) Ciss Coss Pout Min. — — 0.6 — — 37.3 Typ — — — 68 27 38.45 Max. .
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