N-Channel MOSFET. 2SK2595 Datasheet

2SK2595 MOSFET. Datasheet pdf. Equivalent

2SK2595 Datasheet
Recommendation 2SK2595 Datasheet
Part 2SK2595
Description Silicon N-Channel MOSFET
Feature 2SK2595; www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • .
Manufacture Hitachi Semiconductor
Datasheet
Download 2SK2595 Datasheet




Hitachi Semiconductor 2SK2595
www.DataSheet4U.com
2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
Features
High power output, High gain, High efficiency
PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz)
Compact package capable of surface mounting
Outline
1st. Edition
This Device is sensitive to Elector Static Discharge.
An Adequate handling procedure is requested.



Hitachi Semiconductor 2SK2595
2SK2595
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
VDSS
VGSS
ID
I *1
D(pulse)
Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10µs, duty cycle 1 %
2. Value at Tc = 25°C
Ratings
17
±10
1.1
5
20
150
–45 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Zero gate voltage drain
current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Symbol
I DSS
I GSS
VGS(off)
Ciss
Min.
0.6
Output capacitance
Coss
Output Power
Pout
37.3
Drain Rational
ηD 50
Typ Max.
— 10
— ±5.0
— 1.3
68 —
27 —
38.45 —
60 —
Unit
µA
µA
V
pF
pF
dBm
%
Test Conditions
VDS = 12 V, VGS = 0
VGS = ±10V, VDS = 0
ID = 6mA, VDS = 12V
VGS = 5V, VDS = 0
f = 1MHz
VDS = 12V, VGS = 0
f = 1MHz
VDS = 12V,
f = 836.5MHz
Pin = 29.5dBm
VDS = 12V
Pout = 37.3dBm
f = 836.5MHz
Pin = 29.5dBm
2



Hitachi Semiconductor 2SK2595
Main Characteristics
2SK2595
3







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