High Power PNP Epitaxial Planar Bipolar Transistor
Description
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2STW1695
High power PNP epitaxial planar bipolar transistor
General features
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High breakdown voltage VCEO = -140V Complementary to 2STW4468 Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive
2 1 3
Applications
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TO-247
Audio power amplifier
Description
The device is a PNP t...
