SILICON TRANSISTOR. 2N3904 Datasheet

2N3904 TRANSISTOR. Datasheet pdf. Equivalent

Part 2N3904
Description NPN SILICON TRANSISTOR
Feature UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  FEA.
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2N3904
UNISONIC TECHNOLOGIES CO., LTD
2N3904
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
* Collector-Emitter Voltage: VCEO=40V
* Complementary to 2N3906
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 2N3904G-AB3-R
2N3904L-T92-B
2N3904G-T92-B
2N3904L-T92-K
2N3904G-T92-K
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-89
TO-92
TO-92
Pin Assignment
123
BCE
EBC
EBC
Packing
Tape Reel
Tape Box
Bulk
MARKING
SOT-89
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R201-027.F



2N3904
2N3904
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
60
40
V
V
Emitter-Base Voltage
Collector Current
VEBO
6
V
IC 200 mA
Collector Dissipation
SOT-89
TO-92
PC
500
625
mW
Junction Temperature
Operating and Storage Temperature
TJ
TSTG
150
-55 ~ +150
°С
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SOT-89
TO-92
SOT-89
TO-92
SYMBOL
θJA
θJC
RATING
200
83.3
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
BVCBO IC=10A, IE=0
BVCEO IC=1mA,IB=0 (Note)
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
(Note)
Base-Emitter Saturation Voltage
(Note)
Collector Cut-off Current
BVEBO
VCE(SAT)1
VCE(SAT)2
VBE(SAT)1
VBE(SAT)2
ICBO
IE=10A, IC=0
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=30V, VEB=3V
Base Cut-off Current
IBL
hFE1
VCE=30V, VEB=3V
VCE=1V, IC=0.1mA
DC Current Gain (note)
hFE2
hFE3
VCE=1V, IC=1mA
VCE=1V, IC=10mA
hFE4
hFE5
VCE=1V, IC=50mA
VCE=1V, IC=100mA
Current Gain Bandwidth Product
Output Capacitance
fT VCE=20V, IC=10mA, f=100MHz
COB VCB=5V, IE=0, f=1MHz
Turn on Time
tON VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA
Turn off Time
tOFF IB1=1B2=1mA
Note: Pulse test: Pulse Width300s, Duty Cycle2%
MIN
60
40
6
0.65
40
70
100
60
30
300
TYP MAX UNIT
V
V
V
0.2 V
0.3 V
0.85 V
0.95 V
50 nA
50 nA
300
MHz
4 pF
70 ns
250 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-027.F





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