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CEM7101
Dual N-Channel Enhancement Mode Field Effect Transistor
Description
CEM7101 Dual N-Channel Enhancement Mode Field Effect
Transistor
FEATURES 30V, 4A, RDS(ON) = 75mΩ 5 @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAX...
CET
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CEM7101
Dual N-Channel Enhancement Mode Field Effect Transistor
- CET
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