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CED3070

CET
Part Number CED3070
Manufacturer CET
Description N-Channel MOSFET
Published May 7, 2007
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS ...
Datasheet PDF File CED3070 PDF File

CED3070
CED3070

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 62A, RDS(ON) = 9.
5mΩ @VGS = 10V.
RDS(ON) = 13.
5mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED3070/CEU3070 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30 Units V V A A W W/ C C ±20 62 240 60 0.
48 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and...


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