Planar Transistor. BTD1383L3 Datasheet

BTD1383L3 Transistor. Datasheet pdf. Equivalent

Part BTD1383L3
Description NPN Epitaxial Planar Transistor
Feature CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C214L3 Issued.
Manufacture Cystech Electonics
Total Page 4 Pages
Datasheet
Download BTD1383L3 Datasheet



BTD1383L3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTD1383L3
Spec. No. : C214L3
Issued Date : 2005.01.20
Revised Date :
Page No. : 1/4
Description
The BTD1383L3 is a darlington amplifier transistor.
Symbol
BTD1383L3
C
B
BBase
CCollector
EEmitter
E
Outline
SOT-223
C
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES 32 V
Emitter-Base Voltage
VEBO
10
V
Collector Current (DC)
IC 0.3 A
Collector Current (Pulse)
ICP
1.5 (Note 1)
A
Power Dissipation @TA=25°C
Pd
1.5 (Note 2)
W
Thermal Resistance, Junction to Ambient
RθJA
83.3 (Note 2)
°C/W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg -55~+150 °C
Note : 1.Single pulse test, PW=10ms
2 .Device mounted on a glass epoxy printed circuit board 1.575 in × 1.575 in × 0.059 in : mounting pad for the collector
lead min 0.93 in².
BTD1383L3
CYStek Product Specification



BTD1383L3
CYStech Electronics Corp.
Spec. No. : C214L3
Issued Date : 2005.01.20
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE1
*hFE2
fT
Cob
Min.
40
32
10
-
-
-
10K
20K
-
-
Typ.
-
-
-
-
-
-
-
-
250
5
Max.
-
-
-
100
100
1.5
-
-
-
-
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=100µA
IC=1mA, RBE=0Ω
IE=100µA
VCB=30V
VEB=10V
IC=200mA, IB=0.4mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
BTD1383L3
CYStek Product Specification





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