Planar Transistor. BTD1805D3 Datasheet

BTD1805D3 Transistor. Datasheet pdf. Equivalent

Part BTD1805D3
Description NPN Epitaxial Planar Transistor
Feature CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C820D3 Issued Date.
Manufacture Cystech Electonics
Datasheet
Download BTD1805D3 Datasheet



BTD1805D3
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805D3
Spec. No. : C820D3
Issued Date : 2005.03.29
Revised Date :2006.04.21
Page No. : 1/ 4
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
Very low collector-to-emitter saturation voltage
Fast switching speed
High current gain characteristic
Large current capability
Pb-free package
Applications
CCFL drivers
Voltage regulators
Relay drivers
High efficiency low voltage switching applications
Symbol
BTD1805D3
Outline
TO-126ML
BBase
CCollector
EEmitter
BTD1805D3
ECB
CYStek Product Specification



BTD1805D3
CYStech Electronics Corp.
Spec. No. : C820D3
Issued Date : 2005.03.29
Revised Date :2006.04.21
Page No. : 2/ 4
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
150
60
7
5
10 (Note 1)
2
1
20
125
8.33
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw380µs,Duty2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
ton
tstg
tf
Min.
150
60
7
-
-
-
-
-
-
-
200
85
20
-
-
-
-
-
Typ.
-
-
-
-
-
-
200
240
-
0.9
-
-
-
150
50
50
1.35
120
Max.
-
-
-
0.1
0.1
50
300
400
600
1.2
400
-
-
-
-
-
-
-
Unit
V
V
V
µA
µA
mV
mV
mV
mV
V
-
-
-
MHz
pF
ns
µs
ns
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IC=100µA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
IC=100mA, IB=5mA
IC=2A, IB=50mA
IC=3A, IB=150mA
IC=5A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=100mA
VCE=2V, IC=5A
VCE=2V, IC=10A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
VCC=30V, IC=10IB1=-10IB2=1A,
RL=30Ω
*Pulse Test : Pulse Width 380µs, Duty Cycle2%
BTD1805D3
CYStek Product Specification





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