Planar Transistor. BTD1805FP Datasheet

BTD1805FP Transistor. Datasheet pdf. Equivalent

Part BTD1805FP
Description Low Vcesat NPN Epitaxial Planar Transistor
Feature CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Spec. No. : C820FP I.
Manufacture Cystech Electonics
Datasheet
Download BTD1805FP Datasheet



BTD1805FP
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805FP
Spec. No. : C820FP
Issued Date : 2005.03.29
Revised Date :2013.10.29
Page No. : 1/ 7
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
Very low collector-to-emitter saturation voltage
Fast switching speed
High current gain characteristic
Large current capability
RoHS compliant package
Symbol
BTD1805FP
Outline
TO-220FP
(C forming)
TO-220FP
(S forming)
BBase CCollector EEmitter
BCE
BCE
Ordering Information
Device
BTD1805FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
BTD1805FP
CYStek Product Specification



BTD1805FP
CYStech Electronics Corp.
Spec. No. : C820FP
Issued Date : 2005.03.29
Revised Date :2013.10.29
Page No. : 2/ 7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25
Power Dissipation @ TC=25
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
150
70
7
5
10 (Note 1)
2
2
40
62.5
3.125
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw380μs,Duty2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
ton
tstg
tf
Min.
150
70
7
-
-
-
-
-
-
-
200
85
20
-
-
-
-
-
Typ.
-
-
-
-
-
-
200
240
-
0.9
-
-
-
150
50
50
1.35
120
Max.
-
-
-
0.1
0.1
50
300
400
600
1.2
400
-
-
-
-
-
-
-
Unit
V
V
V
μA
μA
mV
mV
mV
mV
V
-
-
-
MHz
pF
ns
μs
ns
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
IC=100μA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
IC=100mA, IB=5mA
IC=2A, IB=50mA
IC=3A, IB=150mA
IC=5A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=100mA
VCE=2V, IC=5A
VCE=2V, IC=10A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
VCC=30V, IC=10IB1=-10IB2=1A,
RL=30Ω
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTD1805FP
CYStek Product Specification





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)