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NJ1800DL

InterFET

Silicon Junction Field-Effect Transistor


Description
F-46 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise 10 mA +150°C – 65°C to +175°C D G Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts Device in this Databook based on the NJ1800...



InterFET

NJ1800DL

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