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NJ1800D

InterFET

Silicon Junction Field-Effect Transistor


Description
F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor ¥ Ultra Low-Noise Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C D G Devices in this Databook based on the NJ1800D Process. Datasheet U290, U291 S Die Size = 0.052" X 0.052" ...



InterFET

NJ1800D

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