Power MOSFET. IRF9952PBF Datasheet

IRF9952PBF MOSFET. Datasheet pdf. Equivalent

Part IRF9952PBF
Description HEXFET Power MOSFET
Feature PD - 95135 IRF9952PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P C.
Manufacture International Rectifier
Total Page 10 Pages
Datasheet
Download IRF9952PBF Datasheet



IRF9952PBF
PD - 95135
IRF9952PbF
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
VDSS 30V -30V
RDS(on) 0.100.25
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
SO-8
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
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Symbol
VDS
VGS
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Maximum
N-Channel P-Channel
30
± 20
3.5 -2.3
2.8 -1.8
16 -10
1.7 -1.3
2.0
1.3
44 57
2.0 -1.3
0.25
5.0 -5.0
-55 to + 150 °C
Units
V
A
W
mJ
A
mJ
V/ ns
Symbol
RθJA
Limit
62.5
Units
°C/W
1
09/15/04



IRF9952PBF
IRF9952PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 30 — —
P-Ch -30 — —
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
— 0.015 —
— 0.015 —
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
—
—
—
—
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
VGS = 10V, ID = 2.2A „
VGS = 4.5V, ID = 1.0A „
VGS = -10V, ID = -1.0A „
VGS = -4.5V, ID = -0.50A „
N-Ch 1.0 — —
P-Ch -1.0 — —
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch — 12 —
P-Ch — 2.4 —
S
VDS = 15V, ID = 3.5A „
VDS = -15V, ID = -2.3A
„
N-Ch — — 2.0
VDS = 24V, VGS = 0V
P-Ch —
N-Ch —
—
—
-2.0
25
µA
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
P-Ch — — -25
VDS = -24V, VGS = 0V, TJ = 125°C
N-P –– — ±100 nA VGS = ±20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
6.9 14
6.1 12
1.0 2.0
1.7 3.4
1.8 3.5
1.1 2.2
nC
N-Channel
ID = 1.8A, VDS = 10V, VGS = 10V
„
P-Channel
ID = -2.3A, VDS = -10V, VGS = -10V
N-Ch — 6.2 12
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
9.7 19
8.8 18
14 28
13 26
20 40
3.0 6.0
6.9 14
ns
N-Channel
VDD = 10V, ID = 1.0A, RG = 6.0Ω,
RD = 10
P-Channel
VDD = -10V, ID = -1.0A, RG = 6.0,
RD = 10
„
N-Ch — 190 —
N-Channel
P-Ch — 190 —
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
N-Ch — 120 — pF
P-Ch — 110 —
P-Channel
N-Ch — 61 —
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
P-Ch — 54 —
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 1.7
IS
Continuous Source Current (Body Diode)
P-Ch — — -1.3 A
N-Ch — — 16
ISM
Pulsed Source Current (Body Diode) 
P-Ch — — 16
VSD Diode Forward Voltage
N-Ch — 0.82 1.2
P-Ch — -0.82 -1.2
V
TJ = 25°C, IS = 1.25A, VGS = 0V ƒ
TJ = 25°C, IS = -1.25A, VGS = 0V ƒ
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
N-Ch —
P-Ch —
27
27
53
54
ns
N-Channel
TJ = 25°C, IF =1.25A, di/dt = 100A/µs
N-Ch —
P-Ch —
28
31
57
62
nC
P-Channel
„
TJ = 25°C, IF = -1.25A, di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
„ Pulse width 300µs; duty cycle 2%.
‚ N-Channel ISD 2.0A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C … Surface mounted on FR-4 board, t 10sec.
P-Channel ISD -1.3A, di/dt 84A/µs, VDD V(BR)DSS, TJ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 22mH RG = 25, IAS = 2.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 67mH RG = 25, IAS = -1.3A.
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