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EM567168

Etron Technology

2M x 16 Pseudo SRAM


Description
EtronTech Features Organized as 2M words by 16 bits Fast Cycle Time : 55ns, 70ns Standby Current : 100uA Deep power-down Current : 10uA (Memory cell data invalid) Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) Compatible with low power SRAM Single Power Supply Voltage : 3.0V±0.3V Package Type : 48-ball FBGA, 6x8mm EM567168 2M x 16 Pseudo S...



Etron Technology

EM567168

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