2.0-20.0 GHz GaAs MMIC
1W Power Amplifier
October 2006 - Rev 13-Oct-06
Small Size: 2.32x1.30x0.076mm
Integrated On-Chip DC Blocking
Single Bias Operation
Directly Cascadable - Fully Matched
P1dB: 29 dBm, Typ. @ 18 GHz
Linear Gain: 9.5 dB, Typ. @ 18 GHz
Silicon Nitride Passivation
Specifications (TA= 25°C,Vdd = 12V)
www.DataSheet4U.com Gain Flatness
Power Output: 2-18 GHz (@1 dB Gain Compression)
Power Output: 2-20 GHz (@1 dB Gain Compression)
P1dB Variation (over operating frequency)
Saturated Output Power: 2-18 GHz
Saturated Output Power: 2-20 GHz
Input Return Loss
Output Return Loss
Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 4).
2. Stability factor measured on-wafer.
Absolute Maximum Ratings
9.0V (min.) / 13.0V (max.)
Continuous Power Dissipation
-50°C to +150°C
Operating Backside Temperature -40°C to (See note 2)
Notes: 1. Operation outside these limits can cause permanent damage.
2. Calculation maximum operating temperature:
Tmax = 175–(Pdis [W] x 15.7) [°C].
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
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