XB1002 Amplifier Datasheet

XB1002 Datasheet, PDF, Equivalent


Part Number

XB1002

Description

GaAs MMIC Buffer Amplifier

Manufacture

Mimix Broadband

Total Page 6 Pages
Datasheet
Download XB1002 Datasheet


XB1002
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Features
High Dynamic Range/Postivie Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
24.0 dB Small Signal Gain
4.0 dB Noise Figure at Low Noise Bias
+14 dBm P1dB Compression Point at Low Noise Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadbands four stage 36.0-43.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 24.0
dB with a noise figure of 4.0 dB across the band. Gain
increases with frequency to compensate for other
component roll-off factors common in 38.0-40.0 GHz
systems.This MMIC uses Mimix Broadbands 0.15 µm
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backsidewww.DataSheet4U.com via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Chip Device Layout
B1002
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
250 mA
+0.3 VDC
-8.0, -3.0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
(3) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB) 1,2
Output Third Order Intercept Point (OIP3)1,2
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Units Min. Typ.
GHz 36.0
-
dB - 8.0
dB - 8.0
dB - 24.0
dB - +/-2.5
dB - 45.0
dB - 4.0
dBm - +14.0
dBm - +24.0
VDC - +3.0
VDC -1.0 -0.5
mA - 110
(1) Optional power bias Vd1,2=5.5V, Id=220mA will typically yield 3-4 dB improved P1dB and OIP3.
(2) Measured using constant current.
Max.
43.0
-
-
-
-
-
-
-
-
+5.5
0.0
220
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XB1002
36.0-43.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Buffer Amplifier Measurements
XB1002 Vd1,2=3.0 V Id1,2=110 mA
30 0
25 -10
20 -20
15 -30
10 -40
5 -50
0
35.0
36.0
37.0
38.0
39.0 40.0 41.0
Frequency (GHz)
42.0
43.0
44.0
-60
45.0
S21 Avg
S12 Avg
B1002
XB1002 Vd1,2=3.0 V Id1,2=110 mA
20 20
15 15
10 10
55
00
-5 -5
-10 -10
-15 -15
-20 -20
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0
Frequency (GHz)
S11 Avg
S22 Avg
5
4
3
2
1
0
35.0
XB1002 Vd1,2=3.0 V Id1,2=110 mA
36.0 37.0 38.0 39.0
Frequency (GHz)
18
17
16
15
14
13
12
11
10
9
8
40.0 35.0
XB1002 Vd1,2=3.0 V Id1,2=110 mA
37.0
39.0
41.0
Frequency (GHz)
43.0
45.0
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.


Features 36.0-43.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1002 Chip Device Layout Features High Dynamic R ange/Postivie Gain Slope Excellent LO D river/Buffer Amplifier Low Noise or Pow er Bias Configurations 24.0 dB Small Si gnal Gain 4.0 dB Noise Figure at Low No ise Bias +14 dBm P1dB Compression Point at Low Noise Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual I nspection to MIL-STD-883 Method 2010 G eneral Description Mimix Broadband’s four stage 36.0-43.0 GHz GaAs MMIC buff er amplifier has a small signal gain of 24.0 dB with a noise figure of 4.0 dB across the band. Gain increases with fr equency to compensate for other compone nt roll-off factors common in 38.0-40.0 GHz systems. This MMIC uses Mimix Broa dband’s 0.15 µm GaAs PHEMT device mo del technology, and is based upon elect ron beam lithography to ensure high rep eatability and uniformity. The chip has surface passivation to protect and pro vide a rugged part with backside via holes and gold metallization to.
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