Buffer Amplifier. XB1005 Datasheet

XB1005 Datasheet PDF, Equivalent


Part Number

XB1005

Description

GaAs MMIC Buffer Amplifier

Manufacture

Mimix Broadband

Total Page 12 Pages
PDF Download
Download XB1005 Datasheet PDF


XB1005 Datasheet
35.0-45.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
B1005
Features
High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
23.0 dB Small Signal Gain
2.7 dB Noise Figure at Low Noise Bias
+16 dBm P1dB Compression at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadbands three stage 35.0-45.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 23.0
dB with a noise figure of 2.7 dB across the band.This
MMIC uses Mimix Broadbands 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
www.DataSheet4U.com
epoxy or eutectic solder die attach process.This
device is well suited for Millimeter-wave Point-to-
Point Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF Table5
MTTF Table5
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11) 3
Output Return Loss (S22) 3
Small Signal Gain (S21) 3
Gain Flatness (S21)
Reverse Isolation (S12) 3
Noise Figure (NF) 4
Output Power for 1 dB Compression (P1dB) 1,2,3
Output Third Order Intercept Point (OIP3)1,2,3
Saturated Output Power (Psat)1,2,3
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=3.5V, Vg=-0.4V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
35.0
4.0
9.0
20.0
-
35.0
-
-
-
+16.0
-1.2
-
Typ.
-
8.0
17.0
23.0
+/-1.0
45.0
2.7
+16.0
+26.0
+18.0
+3.5
-0.4
50
Max.
45.0
-
-
27.0
-
-
3.5
-
-
-
+4.5
+0.1
154
(1) Optional low noise bias Vd1,2,3=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=4.5V, Id1=28mA, Id2=42mA, Id3=84mA.
(4) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 12
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XB1005 Datasheet
35.0-45.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Buffer Amplifier Measurements
B1005
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1080 Devices
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1120 Devices
0
-10
-20
-30
-40
-50
-60
-70
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1120 Devices
0
-5
-10
-15
-20
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1080 Devices
0
-5
-10
-15
-20
-25
-30
-35
-40
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1000 Devices
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~310 Devices
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-1
-2
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean Min
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 12
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.


Features Datasheet pdf 35.0-45.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1005 Chip Device Layout Features High Dynamic R ange Excellent LO Driver/Buffer Amplifi er Low Noise or Power Bias Configuratio ns 23.0 dB Small Signal Gain 2.7 dB Noi se Figure at Low Noise Bias +16 dBm P1d B Compression at Power Bias 100% On-Waf er RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Metho d 2010 General Description Mimix Broad band’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small sign al gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC us es Mimix Broadband’s 0.15 µm GaAs PH EMT device model technology, and is bas ed upon electron beam lithography to en sure high repeatability and uniformity. The chip has surface passivation to pr otect and provide a rugged part with ba ckside via holes and gold metallization to allow either a conductive www.DataS heet4U.com epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Poin.
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