XB1006 Amplifier Datasheet

XB1006 Datasheet, PDF, Equivalent


Part Number

XB1006

Description

GaAs MMIC Buffer Amplifier

Manufacture

Mimix Broadband

Total Page 14 Pages
Datasheet
Download XB1006 Datasheet


XB1006
18.0-38.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
B1006
Features
High Dynamic Range/Positive Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
3.2 dB Noise Figure at Low Noise Bias
+15 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadbands three stage 18.0-38.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 21.0 dB
Absolute Maximum Ratings
with a positive gain slope, and a noise figure of 3.2 dB
across the band.This MMIC uses Mimix Broadbands
0.15 µm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backsidewww.DataSheet4U.com via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process.This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
120 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF Table5
MTTF Table5
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
applications.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Units Min. Typ.
Frequency Range (f )
Input Return Loss (S11)3
GHz 18.0
-
dB 4.0 14.0
Output Return Loss (S22) 3
dB 7.0 12.0
Small Signal Gain (S21)3
dB 19.0 21.0
Gain Flatness (S21)
Reverse Isolation (S12)3
Noise Figure (NF)4
dB - +/-2.0
dB 40.0 50.0
dB - 3.2
Output Power for 1 dB Compression (P1dB) 1,2,3
dBm - +15.0
Output Third Order Intercept Point (OIP3)1,2,3
Saturated Output Power (Psat)1,2,3
dBm - +25.0
dBm +14.0 +18.0
Drain Bias Voltage (Vd1,2)
VDC - +3.5
Gate Bias Voltage (Vg1,2)
VDC -1.2 -0.3
Supply Current (Id) (Vd=3.5V, Vg=-0.3V Typical)
mA - 50
(1) Optional low noise bias Vd1,2=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated, min/max over 18.0-38.0 GHz and biased at Vd=5.5V, Id1=50mA, Id2=50mA.
(4) Unless otherwise indicated, min/max over 20.0-38.0 GHz and biased at Vd=3.5V, Id1=25mA, Id2=25mA.
Max.
38.0
-
-
27.0
-
-
4.5
-
-
-
+5.5
+0.1
100
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 14
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XB1006
18.0-38.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Buffer Amplifier Measurements
B1006
XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA
~190 Devices
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Max Median Mean -3sigma
XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA
~190 Devices
0
-10
-20
-30
-40
-50
-60
-70
-80
16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Max Median Mean -3sigma
XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA
~190 Devices
0
-5
-10
-15
-20
-25
-30
-35
16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Max Median Mean -3sigma
XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA
~190 Devices
0
-5
-10
-15
-20
-25
-30
16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Max Median Mean -3sigma
XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA
~210 Devices
16
15
14
13
12
11
10
9
8
7
6
16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Max Median Mean -3sigma
XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA
~30 Devices
18
17
16
15
14
13
12
11
10
9
8
16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Max Median Mean -3sigma
XB1006 Vd1,2=3.5 V Id1=25 mA, Id2=25 mA
~200 Devices
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0
Frequency (GHz)
Max Median Mean -3sigma
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 14
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.


Features 18.0-38.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1006 Chip Device Layout Features High Dynamic R ange/Positive Gain Slope Excellent LO D river/Buffer Amplifier Low Noise or Pow er Bias Configurations 21.0 dB Small Si gnal Gain 3.2 dB Noise Figure at Low No ise Bias +15 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspe ction to MIL-STD-883 Method 2010 Mimix Broadband’s three stage 18.0-38.0 GH z GaAs MMIC buffer amplifier has a smal l signal gain of 21.0 dB with a positiv e gain slope, and a noise figure of 3.2 dB across the band. This MMIC uses Mim ix Broadband’s 0.15 µm GaAs PHEMT de vice model technology, and is based upo n electron beam lithography to ensure h igh repeatability and uniformity. The c hip has surface passivation to protect and provide a rugged part with www.Data Sheet4U.com backside via holes and gold metallization to allow either a conduc tive epoxy or eutectic solder die attach process. This device is wel.
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