Buffer Amplifier. XB1005-BD Datasheet

XB1005-BD Datasheet PDF, Equivalent


Part Number

XB1005-BD

Description

GaAs MMIC Buffer Amplifier

Manufacture

Mimix Broadband

Total Page 12 Pages
PDF Download
Download XB1005-BD Datasheet PDF


XB1005-BD Datasheet
35.0-45.0 GHz GaAs MMIC
Buffer Amplifier
March 2007 - Rev 06-Mar-07
B1005-BD
Features
High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
23.0 dB Small Signal Gain
2.7 dB Noise Figure at Low Noise Bias
+16 dBm P1dB Compression at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband’s three stage 35.0-45.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 23.0
dB with a noise figure of 2.7 dB across the band.This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
www.DataSheet4U.com
epoxy or eutectic solder die attach process.This
device is well suited for Millimeter-wave
Point-to-Point Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF Table5
MTTF Table5
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11) 3
Output Return Loss (S22) 3
Small Signal Gain (S21) 3
Gain Flatness ( S21)
Reverse Isolation (S12) 3
Noise Figure (NF) 4
Output Power for 1 dB Compression (P1dB) 1,2,3
Output Third Order Intercept Point (OIP3)1,2,3
Saturated Output Power (Psat)1,2,3
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=3.5V, Vg=-0.4V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
35.0
4.0
9.0
20.0
-
35.0
-
-
-
+16.0
-1.2
-
Typ.
-
8.0
17.0
23.0
+/-1.0
45.0
2.7
+16.0
+26.0
+18.0
+3.5
-0.4
50
Max.
45.0
-
-
27.0
-
-
3.5
-
-
-
+4.5
+0.1
154
(1) Optional low noise bias Vd1,2,3=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=4.5V, Id1=28mA, Id2=42mA, Id3=84mA.
(4) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 12
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XB1005-BD Datasheet
35.0-45.0 GHz GaAs MMIC
Buffer Amplifier
March 2007 - Rev 06-Mar-07
Buffer Amplifier Measurements
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1080 Devices
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
B1005-BD
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1120 Devices
0
-10
-20
-30
-40
-50
-60
-70
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1120 Devices
0
-5
-10
-15
-20
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1080 Devices
0
-5
-10
-15
-20
-25
-30
-35
-40
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~1000 Devices
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean -3sigma
XB1005 Vd1,2,3=3.5 V Id1=9 mA, Id2=16 mA, Id3=25 mA
~310 Devices
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-1
-2
35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0
Frequency (GHz)
Max Median Mean Min
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 12
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.


Features Datasheet pdf 35.0-45.0 GHz GaAs MMIC Buffer Amplifier March 2007 - Rev 06-Mar-07 B1005-BD C hip Device Layout Features High Dynami c Range Excellent LO Driver/Buffer Ampl ifier Low Noise or Power Bias Configura tions 23.0 dB Small Signal Gain 2.7 dB Noise Figure at Low Noise Bias +16 dBm P1dB Compression at Power Bias 100% On- Wafer RF, DC and Noise Figure Testing 1 00% Visual Inspection to MIL-STD-883 Me thod 2010 General Description Mimix Br oadband’s three stage 35.0-45.0 GHz G aAs MMIC buffer amplifier has a small s ignal gain of 23.0 dB with a noise figu re of 2.7 dB across the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformi ty. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallizat ion to allow either a conductive www.Da taSheet4U.com epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave P.
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