XB1008-BD Amplifier Datasheet

XB1008-BD Datasheet, PDF, Equivalent


Part Number

XB1008-BD

Description

GaAs MMIC Buffer Amplifier

Manufacture

Mimix Broadband

Total Page 9 Pages
Datasheet
Download XB1008-BD Datasheet


XB1008-BD
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
March 2007 - Rev 06-Mar-07
Features
Excellent Transmit LO/Output Buffer Stage
Compact Size
18.0 dB Small Signal Gain
+20.0 dBm P1dB Compression Point
5.5 dB Noise Figure
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s two stage 10.0-21.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 18.0
dB with a +20.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
www.DataSheet4U.com
Microwave and Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
B1008-BD
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+20.0 dBm
-65 to +165 OC
-55 to MTTF Graph1
MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1dB Compression (P1dB) 2
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=4.5V, Vg2=-0.5V Typical)
(2) Measured using constant current.
Units Min. Typ. Max.
GHz 10.0 - 21.0
dB - 15.0 -
dB - 17.0 -
dB - 18.0 -
dB - +/-2.0 -
dB - 35.0 -
dB - 5.5 -
dBm - +20.0 -
dBm - +22.0 -
VDC - +4.5 +5.5
VDC -1.0 -0.5 0.0
mA - 130 155
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XB1008-BD
10.0-21.0 GHz GaAs MMIC
Buffer Amplifier
March 2007 - Rev 06-Mar-07
B1008-BD
Buffer Amplifier Measurements
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
8.0
9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
Frequency (GHz)
+95 Deg C -30 Deg C +25 Deg C
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
0
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
Frequency (GHz)
+95 Deg C -30 Deg C +25 Deg C
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
0
-5
-5
-10
-10
-15
-15
-20
-20
-25
-25
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
*Includes fixture losses
Frequency (GHz)
+95 Dec C -30 Deg C +25 Deg C
-30
8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0
*Includes fixture losses
Frequency (GHz)
+95 Deg C -30 Deg C +25 Deg C
XB1008-BD Vd=4.0 V, Id=130 mA, Vg2=Open
Pin=+10 dBm
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0
Frequency (GHz)
+95 deg C -30 deg C +25 deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 9
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.


Features 10.0-21.0 GHz GaAs MMIC Buffer Amplifier March 2007 - Rev 06-Mar-07 B1008-BD C hip Device Layout Features Excellent T ransmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dB m P1dB Compression Point 5.5 dB Noise F igure 100% On-Wafer RF, DC and Output P ower Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Descri ption Mimix Broadband’s two stage 10. 0-21.0 GHz GaAs MMIC buffer amplifier h as a small signal gain of 18.0 dB with a +20.0 dBm P1dB output compression poi nt. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model techno logy, and is based upon electron beam l ithography to ensure high repeatability and uniformity. The chip has surface p assivation to protect and provide a rug ged part with backside via holes and go ld metallization to allow either a cond uctive epoxy or eutectic solder die att ach process. This device is well suited for www.DataSheet4U.com Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applicat.
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