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FQA6N90C
900V N-Channel MOSFET
Description
FQA6N90C 900V N-Channel MOSFET QFET FQA6N90C 900V N-Channel MOSFET Features 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ® Description These N-Channel enhancement mode power field effect
transistor
s are produced using...
Fairchild Semiconductor
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