PD - 94833
HEXFET® Power MOSFET
l l l l l l
IRFI540NPbF
D
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
VDSS = 100V
G S
RDS(on) = 0.052Ω ID = 20A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...
