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IRGB10B60KD
INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 94382D INSULATED GATE BIPOLAR
TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KD IRGS10B60KD IRGSL10B60KD VCES = 600V IC = 12A, TC=100°C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperatur...
International Rectifier
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