PNP Transistor. 2SA1615-Z Datasheet

2SA1615-Z Transistor. Datasheet pdf. Equivalent

2SA1615-Z Datasheet
Recommendation 2SA1615-Z Datasheet
Part 2SA1615-Z
Description PNP Transistor
Feature 2SA1615-Z; P TYPE TTANSISTORS -10A 2SA1615, 1615-Z The 2SA1615 and 1615-Z are available for the large current.
Manufacture Stanson Technology
Datasheet
Download 2SA1615-Z Datasheet





Stanson Technology 2SA1615-Z
P TYPE TTANSISTORS
-10A
2SA1615, 1615-Z
The 2SA1615 and 1615-Z are available for the large current control in small due to the
low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
PIN CONFIGURATION
2SA1615
2SA1615-Z
1.Base 2.Collector 3.Emitter
FEATURE
Large current capacity:
Ic(DC): -10A, Ic(pulse) : -15A
High hFE and low collector saturation voltage :
hFE = 200 MIN (@Vec = -2V, Ic = -0.5A)
VCE(sat) -0.25V (@Ic = -4.0A, IB = -0.05A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25 )
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PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
*PW 10ms, duty cycle 50%
**Printing board mounted
SYMBOL
VCBO
VCEO
VEBO
Ic (DC)
Ic (pulse)*
IB (DC)
PT (Ta =25 )**
PT (Tc = 25 )
Tj
Tstg
RATINGS
-30
-20
-10
-10
-15
-0.5
1.0
15
150
-55 to +150
UNIT
V
V
V
A
A
A
W
W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
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Stanson Technology 2SA1615-Z
P TYPE TTANSISTORS
-10A
2SA1615, 1615-Z
ELECTRICAL CHARACTERISTICS Ta=25
PARAMETER
SYMBOL
CONDITIONS
MIN TYP
Collector cutoff current
ICBO VCB = -20V, IE = 0
Emitter cutoff current
IEBO VEB = -8.0, Ic = 0
DC current agin
hFE1* VCE = -2.0V, Ic = -0.5A
200
CC current agin
hFE2* VCE = -2.0V, Ic = -4.0A
160
Collector saturation voltage VCE(sat)* Ic = -4.0A, IB = -0.05A
-0.2
Base saturation voltage
VBE(sat)* Ic = -4.0A, IB = -0.05A
-0.9
Gain bandwidth voltage
ft VCE = -0.5V, IE = 1.5A
180
Output capacity
Cob VCB = -10V, IE = 0, f = 1.0MHz
220
Turn-on time
Storage time
ton Ic = -5.0A, IB1 = -IB2 = -0.125A
tstg RL = 2.0ohm, Vcc = -10V
80
300
Fall time
tr
60
* Pulse test PW 350uA, duty cycle 2%
MAX UNIT
-1.0 uA
-1.0 uA
600
-0.25
-1.2
V
V
MHz
pF
ns
ns
ns
hFE CLADDIFICATION
Marking
hFE2
L
200 to 400
K
300 to 600
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295



Stanson Technology 2SA1615-Z
P TYPE TTANSISTORS
-10A
PACKAGE DRAWING ( unit: mm )
2SA1615
2SA1615, 1615-Z
2SA1615-Z
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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