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AS4SD4M16 Datasheet, Equivalent, DRAM Memory.

4 Meg x 16 SDRAM Synchronous DRAM Memory

4 Meg x 16 SDRAM Synchronous DRAM Memory

 

 

 

Part AS4SD4M16
Description 4 Meg x 16 SDRAM Synchronous DRAM Memory
Feature SDRAM Austin Semiconductor, Inc.
4 Meg x 16 SDRAM Synchronous DRAM Memory FEATU RES












• www.
DataSheet4U.
com A S4SD4M16 PIN ASSIGNMENT (Top View) 54-P in TSOP Extended Testing Over -55°C t o +125° C and Industrial Temp -40°C t o 85° C WRITE Recovery ( tWR/ tDPL) tW R = 2 CLK Fully synchronous; all signal s registered on positive edge of system clock Internal pipelined operation; co lumn address can be changed every clock cycle Internal banks for hiding row ac cess/precharge Programmable burst lengt hs: 1, 2, 4, 8 or full page Auto Precha rge and Auto Refresh Modes Self Refresh Mode .
Manufacture Austin Semiconductor
Datasheet
Download AS4SD4M16 Datasheet
Part AS4SD4M16
Description 4 Meg x 16 SDRAM Synchronous DRAM Memory
Feature SDRAM Austin Semiconductor, Inc.
4 Meg x 16 SDRAM Synchronous DRAM Memory FEATU RES












• www.
DataSheet4U.
com A S4SD4M16 PIN ASSIGNMENT (Top View) 54-P in TSOP Extended Testing Over -55°C t o +125° C and Industrial Temp -40°C t o 85° C WRITE Recovery ( tWR/ tDPL) tW R = 2 CLK Fully synchronous; all signal s registered on positive edge of system clock Internal pipelined operation; co lumn address can be changed every clock cycle Internal banks for hiding row ac cess/precharge Programmable burst lengt hs: 1, 2, 4, 8 or full page Auto Precha rge and Auto Refresh Modes Self Refresh Mode .
Manufacture Austin Semiconductor
Datasheet
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AS4SD4M16

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AS4SD4M16

AS4SD4M16

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