IRG4BC30FPBF BIPOLAR TRANSISTOR Datasheet

IRG4BC30FPBF Datasheet, PDF, Equivalent


Part Number

IRG4BC30FPBF

Description

Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR

Manufacture

International Rectifier

Total Page 8 Pages
Datasheet
Download IRG4BC30FPBF Datasheet


IRG4BC30FPBF
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PD -95651
IRG4BC30FPbF
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220AB
Max.
600
31
17
120
120
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
1.2
–––
80
–––
Units
°C/W
g (oz)
1
7/23/04

IRG4BC30FPBF
IRG4BC30FPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage „
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance …
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
—
—
—
—
3.0
—
6.1
—
—
—
—
Typ. Max. Units
—— V
—— V
0.69 — V/°C
1.59 1.8
1.99 —
1.7 —
V
— 6.0
-11 — mV/°C
10 — S
— 250 µA
— 2.0
— 1000
— ±100 n A
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 17A
VGE = 15V
IC = 31A
See Fig.2, 5
IC = 17A , TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 51 77
IC = 17A
— 7.9 12
— 19 28
nC VCC = 400V
VGE = 15V
See Fig. 8
— 21 —
— 15 — ns TJ = 25°C
— 200 300
IC = 17A, VCC = 480V
— 180 270
VGE = 15V, RG = 23
— 0.23 —
Energy losses include "tail"
— 1.18 — mJ See Fig. 10, 11, 13, 14
— 1.41 2.0
— 20 —
TJ = 150°C,
— 16 —
— 290 —
ns IC = 17A, VCC = 480V
VGE = 15V, RG = 23
— 350 —
Energy losses include "tail"
— 2.5 — mJ See Fig. 13, 14
— 7.5 — nH Measured 5mm from package
— 1100 —
VGE = 0V
— 74 —
— 14 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
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Features PD -95651 IRG4BC30FPbF INSULATED GATE B IPOLAR TRANSISTOR Features • Fast: opt imized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz i n resonant mode). • Generation 4 IGBT design provides tighter parameter distr ibution and higher efficiency than Gene ration 3 • Industry standard TO-220AB package • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benef its • Generation 4 IGBTs offer highest efficiency available • IGBTs optimize d for specified application conditions • Designed to be a "drop-in" replaceme nt for equivalent industry-standard Gen eration 3 IR IGBTs www.DataSheet4U.com TO-220AB Absolute Maximum Ratings Par ameter VCES IC @ TC = 25°C IC @ TC = 1 00°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-E mitter Breakdown Voltage Continuous Col lector Current Continuous Collector Cur rent Pulsed Collector Current  Clampe d Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanch.
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