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IRGB10B60KDPBF
INSULATED GATE BIPOLAR TRANSISTOR
Description
PD - 94925A INSULATED GATE BIPOLAR
TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF VCES = 600V IC = 12A, TC=100°C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) T...
International Rectifier
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IRGB10B60KDPBF
INSULATED GATE BIPOLAR TRANSISTOR
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