TGA4501-SCC Band HPA Datasheet

TGA4501-SCC Datasheet, PDF, Equivalent


Part Number

TGA4501-SCC

Description

Ka Band HPA

Manufacture

TriQuint Semiconductor

Total Page 11 Pages
Datasheet
Download TGA4501-SCC Datasheet


TGA4501-SCC
Not Recommended for New Designs
Product Data Sheet
November 19, 2003
TGA4501-SCC
TriQuint Recommends the TGA4505-EPU be used for New Designs
24-31 GHz Ka Band HPA
Key Features
• 0.25 um pHEMT Technology
• 23 dB Nominal Gain
• 34.5 dBm Nominal P1dB
• 40 dBm IMD3 Typical
• Bias 6 V @ 2.1 A
Chip Dimensions 4.3 mm x 3.0 mm x 0.05 mm
Primary Applications
• Satellite Ground Terminal
• Point-to-Point Radio
Product Description
www.DataSheet4U.com The TriQuint TGA4501-SCC is a compact
3 Watt High Power Amplifier MMIC for
Ka-band applications. The part is
designed using TriQuint’s proven
standard 0.25 um gate Power pHEMT
production process.
The TGA4501 provides a nominal 34.5
dBm of output power at 1 dB gain
compression from 24-31 GHz with a small
signal gain of 23 dB.
Fixtured Data
Bias Conditions: Vd = 6V, Id = 2.1A± 5%
27
25
23
21
19
17
15
13
11
9
7
23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals,
point to point radio and LMDS.
The TGA4501-SCC is 100% DC and RF
tested on-wafer to ensure performance
compliance.
37
35
33
31
29
27
25
27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1

TGA4501-SCC
Not Recommended for New Designs
Product Data Sheet
November 19, 2003
TGA4501-SCC
TriQuint Recommends the TGA4505-EPU be used for New Designs
TABLE I
MAXIMUM RATINGS
Symbol
V+
V-
I+
| IG |
PIN
PD
TCH
TM
TSTG
Parameter 5/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current (Quiescent)
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
8V
-5V TO 0V
3.0 A
62 mA
24 dBm
18.4 W
150 0C
320 0C
-65 to 150 0C
Notes
4/
4/
3/ 4/
1/ 2/
1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to failure (TM).
For maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median
life is reduced from 7.4 E+6 to 4.6 E+5 hours.
4/ Combinations of supply voltage, supply current, input power, and output power shall not
exceed PD.
5/ These ratings represent the maximum operable values for this device.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2


Features Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-S CC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 GHz Ka B and HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 T ypical • Bias 6 V @ 2.1 A Primary App lications • Satellite Ground Terminal • Point-to-Point Radio Chip Dimensio ns 4.3 mm x 3.0 mm x 0.05 mm Fixtured D ata Bias Conditions: Vd = 6V, Id = 2.1A ± 5% Product Description 27 www.Data Sheet4U.com The TriQuint TGA4501-SCC i s a compact 3 Watt High Power Amplifier MMIC for Ka-band applications. The par t is designed using TriQuint’s proven standard 0.25 um gate Power pHEMT prod uction process. The TGA4501 provides a nominal 34.5 dBm of output power at 1 d B gain compression from 24-31 GHz with a small signal gain of 23 dB. The part is ideally suited for low cost emerging markets such as base station transmitt ers for satellite ground terminals, point to point radio and LMDS. The TGA4501-S.
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