TGA4507-EPU Noise Amplifier Datasheet

TGA4507-EPU Datasheet, PDF, Equivalent


Part Number

TGA4507-EPU

Description

Ka Band Low Noise Amplifier

Manufacture

TriQuint Semiconductor

Total Page 9 Pages
Datasheet
Download TGA4507-EPU Datasheet


TGA4507-EPU
Advance Product Information
January 7, 2004
Ka Band Low Noise Amplifier
TGA4507-EPU
Key Features
• Typical Frequency Range: 28 - 36 GHz
• 2.3 dB Nominal Noise Figure
• 22 dB Nominal Gain
• 12 dBm Nominal P1dB
• Bias 3.0 V, 60 mA
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 1.86 x 0.85 x 0.1 mm
(0.073 x 0.033 x 0.004 in)
Primary Applications
Preliminary Measured Data
Bias Conditions: Vd = 3.0 V, Id = 60 mA
30
20 Gain
• Point-to-Point Radio
• Point-to-MultiPoint Radio
• Ka Band VSAT
10
0www.DataSheet4U.com
-10
-20
ORL
IRL
-30
20 22 24 26 28 30 32 34 36 38 40
Frequency (GHz)
3.0
2.5
2.0
1.5
1.0
26 28 30 32 34 36 38 40
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com

TGA4507-EPU
Advance Product Information
January 7, 2004
TGA4507-EPU
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
½Ig½
PIN
PD
TCH
TM
TSTG
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
5V
-1 TO +0.5 V
280 mA
6 mA
TBD
TBD
150 0C
320 0C
-65 to 150 0C
2/
2/ 3/
3/
2/ 4/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of TBD, the median life is
reduced from TBD to TBD hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www.triquint.com


Features Advance Product Information January 7, 2 004 Ka Band Low Noise Amplifier Key Fe atures • • • • • • • TGA 4507-EPU Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 d B Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technol ogy Chip Dimensions 1.86 x 0.85 x 0.1 m m (0.073 x 0.033 x 0.004 in) Primary A pplications Preliminary Measured Data B ias Conditions: Vd = 3.0 V, Id = 60 mA 30 Gain & Return Loss (dB) 20 10 0 • • • Point-to-Point Radio Point-to -MultiPoint Radio Ka Band VSAT Gain w ww.DataSheet4U.com ORL IRL -10 -20 -3 0 20 22 24 26 28 30 32 34 36 38 40 Freq uency (GHz) 3.0 2.5 2.0 1.5 1.0 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typicall y early in their characterization proce ss prior to finalizing all electrical a nd process specifications. Specificatio ns are subject to change without notice Noise Figure (dB) TriQuint Semicondu ctor Texas: Phone (972)994-8465 Fax (972)994 8504 Email: Info-mmw@tqs.com Web: www..
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