TGA4511-EPU Noise Amplifier Datasheet

TGA4511-EPU Datasheet, PDF, Equivalent


Part Number

TGA4511-EPU

Description

Balanced Low Noise Amplifier

Manufacture

TriQuint Semiconductor

Total Page 8 Pages
Datasheet
Download TGA4511-EPU Datasheet


TGA4511-EPU
Advance Product Information
November 2, 2004
30-38 GHz Balanced Low Noise Amplifier
TGA4511-EPU
Key Features
• 0.15 um pHEMT Technology
• 15 dBm Nominal Pout @ 35 GHz
• 17 dB Nominal Gain @ 35 GHz
• 2.5 dB Noise Figure @ 35 GHz
• Bias Conditions: 3.5V, 110 mA
• Chip Dimensions: 2.7mm x 1.8mm
Preliminary Measured Data
Bias Conditions: Vd = 3.5 V, Id = 110 mA
5
Primary Applications
• Point-to-Point Radio
• Point-to-Multipoint Radio
4
3
www.DataSheet4U.com
2
1
0
26 28 30 32 34 36 38 40
Frequency (GHz)
22
20
18
16
14
12
10
26 28 30 32 34 36 38 40
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1

TGA4511-EPU
Advance Product Information
November 2, 2004
TABLE I
MAXIMUM RATINGS 5/
SYMBOL
PARAMETER
V+ Positive Supply Voltage
V- Negative Supply Voltage Range
I+ Positive Supply Current (Quiescent)
| IG | Gate Supply Current
PIN
PD
TCH
TM
TSTG
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
6V
-2 to 0 V
400 mA
40 mA
TBD
TBD
150 0C
320 0C
-65 to 150 0C
NOTES
4/
4/
3/ 4/
1/ 2/
1/ These ratings apply to each individual FET.
2/ Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
3/ When operated at this bias condition with a base plate temperature of TBD, the median life is
reduced from TBD to TBD.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
5/ These ratings represent the maximum operable values for this device.
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25oC ± 5oC)
PARAMETER
Drain Operating
Quiescent Current
Small Signal Gain
Input Return Loss (Linear Small Signal)
Output Return Loss (Linear Small Signal
Output Power @ 1 dB Compression Gain
Third Order Intercept Point @ -12 dBm @ 35GHz
TYPICAL
3.5
110
17
18
18
15
25
UNITS
V
mA
dB
dB
dB
dBm
dBm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2


Features Advance Product Information November 2, 2004 30-38 GHz Balanced Low Noise Ampl ifier Key Features • • • • • • TGA4511-EPU 0.15 um pHEMT Technol ogy 15 dBm Nominal Pout @ 35 GHz 17 dB Nominal Gain @ 35 GHz 2.5 dB Noise Figu re @ 35 GHz Bias Conditions: 3.5V, 110 mA Chip Dimensions: 2.7mm x 1.8mm Prel iminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 4 3 2 1 0 26 28 30 32 34 36 38 40 Frequency (GHz) P rimary Applications • • Point-to-Po int Radio Point-to-Multipoint Radio ww w.DataSheet4U.com Noise Figure (dB) 2 2 20 Gain (dB) 18 16 14 12 10 26 28 30 32 34 36 38 40 Frequency (GHz) Note: De vices designated as EPU are typically e arly in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice T riQuint Semiconductor Texas: Phone (972 )994-8465 Fax (972)994 8504 Web: www.tr iquint.com 1 Advance Product Informat ion November 2, 2004 TABLE I MAXIMUM RATINGS 5/ SYMBOL V + - PARAMETER Positiv.
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