TGA4513 Power Amplifier Datasheet

TGA4513 Datasheet, PDF, Equivalent


Part Number

TGA4513

Description

2W Balanced Power Amplifier

Manufacture

TriQuint Semiconductor

Total Page 10 Pages
Datasheet
Download TGA4513 Datasheet


TGA4513
Advance Product Information
Dec 14, 2004
27 - 31 GHz 2W Balanced Power Amplifier
TGA4513
Key Features
• 27 - 31 GHz Bandwidth
• > 32 dBm P1dB
• 33 dBm Psat
• 20 dB Nominal Gain
• IMR3 is 37 dBc @ 18 dBm SCL
• 14 dB Nominal Return Loss
• Bias: 6 V, 840 mA
• 0.25 um 3MI MMW pHEMT Technology
• Chip Dimensions: 2.8 x 2.2 x 0.1 mm
(0.110 x 0.087 x 0.004) in
Measured Data
Primary Applications
Bias Conditions: Vd = 6 V, Id = 840 mA
• Satellite Ground Terminal
www.DataSheet4U.com
25
20
15
10
5
Gain
0
-5 ORL
IRL
-10
-15
-20
-25
25 26 27 28 29 30 31 32 33 34 35
Frequency (GHz)
Point to Point Radio
Point to Multi Point Radio
LMDS
35
34
Psat
33
32 P1dB
31
30
29
28
26 27 28 29 30 31 32 33
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com

TGA4513
Advance Product Information
Dec 14, 2004
TGA4513
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
V+ Positive Supply Voltage
V- Negative Supply Voltage Range
I+ Positive Supply Current
IGGate Supply Current
PIN Input Continuous Wave Power
PD Power Dissipation
TCH Operating Channel Temperature
TM Mounting Temperature (30 Seconds)
TSTG Storage Temperature
VALUE
7V
-3 TO 0 V
1.05 A
10 mA
22 dBm
6.71W
150 0C
320 0C
-65 to 150 0C
NOTES
2/
2/
3/
2/ 4/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of 70 oC, the median life is
1.0E+6 hrs.
5/ Junction iperating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
2
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com Info: info-mmw@tqs.com


Features Advance Product Information Dec 14, 2004 27 - 31 GHz 2W Balanced Power Amplifi er Key Features • • • • • • • • • TGA4513 27 - 31 GHz Band width > 32 dBm P1dB 33 dBm Psat 20 dB N ominal Gain IMR3 is 37 dBc @ 18 dBm SCL 14 dB Nominal Return Loss Bias: 6 V, 8 40 mA 0.25 um 3MI MMW pHEMT Technology Chip Dimensions: 2.8 x 2.2 x 0.1 mm (0. 110 x 0.087 x 0.004) in Measured Data Bias Conditions: Vd = 6 V, Id = 840 mA 25 20 15 www.DataSheet4U.com Primary A pplications • • • Satellite Groun d Terminal Point to Point Radio Point t o Multi Point Radio LMDS 10 5 0 -5 -10 -15 -20 -25 25 26 27 Gain IRL • G ain (dB) ORL 28 29 30 31 32 33 34 35 Frequency (GHz) 35 34 33 Pout ( dBm) 32 31 30 29 28 26 27 28 29 30 31 3 2 33 Psat P1dB Frequency (GHz) Note: This device is early in the characteriz ation process prior to finalizing all e lectrical specifications. Specification s are subject to change without notice. TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint..
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