Amplifier. TGA4514-EPU Datasheet

TGA4514-EPU Amplifier. Datasheet pdf. Equivalent


Part Number

TGA4514-EPU

Description

Ka Band 2W Power Amplifier

Manufacture

TriQuint Semiconductor

Total Page 11 Pages
Datasheet
Download TGA4514-EPU Datasheet


TGA4514-EPU
Advance Product Information
April 28, 2003
Ka Band 2W Power Amplifier
TGA4514-EPU
Key Features
• Typical Frequency Range: 31 - 35 GHz
• 33.5 dBm Nominal Psat @ Vd = 7V
• 31.5 dBm Nominal P1dB
• IMD3: 31dBc at Pout/tone=22dBm
• 19 dB Nominal Gain
• Bias 6 - 7 V, 1150 mA
• 0.25 um 2MI pHEMT Technology
• Chip Dimensions 4.0 x 3.2 x 0.1 mm
(0.161 x 0.128 x 0.004) in
Preliminary Measured Data
30 Bias Conditions: Vd = 6 V, Id = 1150 mA
20
GAIN
10
Primary Applications
• Point-to-Point Radio
• Military Radar Systems
• Ka Band Sat-Com
0
www.DataSheet4U.com
-10
ORL
-20
IRL
-30
28 29 30 31 32 33 34 35 36 37 38
Frequency (GHz)
35 Bias Conditions: Vd = 6/7 V, Id = 1150 mA
34 Vd = 7 V
33
32 Vd = 6 V
31
30
29
28
30 31 32 33 34 35 36 37
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1

TGA4514-EPU
Advance Product Information
April 28, 2003
TGA4514-EPU
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
Vd
Vg
Id
½Ig½
PIN
PD
TCH
TM
TSTG
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
8V
-5 TO 0 V
2.5 A
70 mA
27 dBm
TBD
150 0C
320 0C
-65 to 150 0C
2/
2/ 3/
3/
2/ 4/
5/ 6/
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of TBD, the median life is
reduced from TBD to TBD hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2


Features Advance Product Information April 28, 20 03 Ka Band 2W Power Amplifier Key Feat ures • • • • • • • • T GA4514-EPU Typical Frequency Range: 31 - 35 GHz 33.5 dBm Nominal Psat @ Vd = 7 V 31.5 dBm Nominal P1dB IMD3: 31dBc at Pout/tone=22dBm 19 dB Nominal Gain Bias 6 - 7 V, 1150 mA 0.25 um 2MI pHEMT Tec hnology Chip Dimensions 4.0 x 3.2 x 0.1 mm (0.161 x 0.128 x 0.004) in Prelimi nary Measured Data 30 Gain & Return Los s (dB ) 20 10 0 -10 -20 -30 28 29 30 31 32 33 34 35 36 37 38 Frequency (GHz) B ias Conditions: Vd = 6 V, Id = 1150 mA Primary Applications • • • Point -to-Point Radio Military Radar Systems Ka Band Sat-Com GAIN ORL www.DataShee t4U.com IRL 35 Psat @ Pin= 20dBm (dBm ) 34 33 32 31 30 29 28 30 Bias Conditi ons: Vd = 6/7 V, Id = 1150 mA Vd = 7 V Vd = 6 V 31 32 33 34 35 Frequency ( GHz) 36 37 Note: Devices designated as EPU are typically early in their cha racterization process prior to finalizi ng all electrical and process specifications. Specifications are subject to change wi.
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